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DL4741A HC2016 001547 TA2S50A BAS16D LBT13814 DL4741A TC2501
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 BB 669
Silicon Tuning Diode Preliminary data * For VHF 2-Band-hyperband-TV-tuners * Very high capacitance ratio * Low series resistance * Extremely small plastic SMD package * Excellent uniformity and matching due to "in-line" matching assembly procedure
2
1
VPS05176
Type BB 669
Marking Ordering Code 1 Q62702-B0839
Pin Configuration Package 1=C 2=A SOD-323
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R 5k) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 - 55 ...+150 - 55 ...+150 mA C Unit V
VR VRM IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-10-1998 1998-11-01
BB 669
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 200 nA Unit
IR IR
-
VR = 30 V
Reverse current
VR = 30 V, TA = 85 C
AC characteristics Diode capacitance
CT
51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 15.5 20.9 0.85 1.4 61.5 47.2 3 2.9 17 23.3 2 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/C T25 14.5 CT1/C T28
CT/C T 18 -
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance ratio 1) % nH
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
rs Ls
VR = 8 V, f = 470 MHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group Semiconductor Group
22
Jul-10-1998 1998-11-01
BB 669
Diode capacitance CT = f (V R) f = 1MHz
60
pF
50
CT
45 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24
V
30
VR
Semiconductor Group Semiconductor Group
33
Jul-10-1998 1998-11-01


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